دیتاشیت NTMYS021N06CLTWG

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دانلود دیتاشیت NTMYS021N06CL	NTMYS021N06CL Datasheet

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTMYS021N06CLTWG
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 3.8W;28W
Total Gate Charge (Qg@Vgs): 5nC@10V
Input Capacitance (Ciss@Vds): 410pF@25V
Continuous Drain Current (Id): 9.8A;27A
Gate Threshold Voltage (Vgs(th)@Id): 2V@16uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 21mΩ@10A,10V
Package: LFPAK-4
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 16µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 4-LFPAK
Package / Case: SOT-1023, 4-LFPAK
Base Part Number: NTMYS02
detail: N-Channel 60V 9.8A (Ta), 27A (Tc) 3.8W (Ta), 28W (Tc) Surface Mount 4-LFPAK